Produkte > NEXPERIA USA INC. > NHDTA143ZTVL

NHDTA143ZTVL Nexperia USA Inc.


NHDTA123JT_143ZT_114YT_SER.pdf Hersteller: Nexperia USA Inc.
Description: NHDTA143ZT/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 9800 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
46+0.57 EUR
56+ 0.47 EUR
105+ 0.25 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.1 EUR
5000+ 0.087 EUR
Mindestbestellmenge: 46
Produktrezensionen
Produktbewertung abgeben

Technische Details NHDTA143ZTVL Nexperia USA Inc.

Description: NHDTA143ZT/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 250 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote NHDTA143ZTVL

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NHDTA143ZTVL Hersteller : Nexperia USA Inc. NHDTA123JT_143ZT_114YT_SER.pdf Description: NHDTA143ZT/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
NHDTA143ZTVL NHDTA143ZTVL Hersteller : Nexperia NHDTA123JT_143ZT_114YT_SER-1880114.pdf Bipolar Transistors - Pre-Biased NHDTA143ZT/SOT23/TO-236AB
Produkt ist nicht verfügbar