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NHUMB9-QX

NHUMB9-QX Nexperia


nhumb10_13_9-q_ser.pdf Hersteller: Nexperia
80 V, 100 mA PNP/PNP Resistor-Equipped Double Transistors Automotive AEC-Q101
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Technische Details NHUMB9-QX Nexperia

Description: TRANS PREBIAS 2PNP 80V 6-TSSOP, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased, Power - Max: 235mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 80V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Frequency - Transition: 150MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: 6-TSSOP, Grade: Automotive, Qualification: AEC-Q101.

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NHUMB9-QX NHUMB9-QX Hersteller : Nexperia USA Inc. Description: TRANS PREBIAS 2PNP 80V 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 235mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
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NHUMB9-QX NHUMB9-QX Hersteller : Nexperia Bipolar Transistors - BJT 80 V, 100 mA PNP/PNP resistor-equipped double transistors
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