NIMD6302R2 ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NIMD6302R2 - NIMD6302R2, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
| Anzahl | Privatkunde |
|---|---|
| 349+ | 2.34 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
349 Stücke
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Technische Details NIMD6302R2 ONSEMI
Description: NFET SO8D 30V .050R, Packaging: Bulk, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A, Power Dissipation (Max): 2W, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Vgs (Max): 12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 16 V.
Weitere Produktangebote NIMD6302R2 nach Preis ab 2.8 EUR bis 2.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| NIMD6302R2 | onsemi |
Description: NFET SO8D 30V .050R Packaging: Bulk Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A Power Dissipation (Max): 2W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Vgs (Max): 12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 16 V |
auf Bestellung 7385 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NIMD6302R2 |
|
Hersteller: onsemi
Description: NFET SO8D 30V .050R
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 16 V
Description: NFET SO8D 30V .050R
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 16 V
auf Bestellung 7385 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 197+ | 2.8 EUR |