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NJD35N04T4G

NJD35N04T4G onsemi


NJD35N04_D-2318085.pdf Hersteller: onsemi
Darlington Transistors NPN DARL POWER TRAN
auf Bestellung 10837 Stücke:

Lieferzeit 779-783 Tag (e)
Anzahl Preis ohne MwSt
2+2.09 EUR
10+ 1.72 EUR
100+ 1.34 EUR
500+ 1.14 EUR
1000+ 0.93 EUR
2500+ 0.91 EUR
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Technische Details NJD35N04T4G onsemi

Description: TRANS NPN DARL 350V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V, Frequency - Transition: 90MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 45 W.

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NJD35N04T4G njd35n04-d.pdf
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Lieferzeit 21-28 Tag (e)
NJD35N04T4G NJD35N04T4G Hersteller : ON Semiconductor njd35n04-d.pdf Trans Darlington NPN 350V 4A 45000mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
NJD35N04T4G NJD35N04T4G Hersteller : ON Semiconductor njd35n04-d.pdf Trans Darlington NPN 350V 4A 45000mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
NJD35N04T4G NJD35N04T4G Hersteller : ON Semiconductor njd35n04-d.pdf Trans Darlington NPN 350V 4A 45000mW 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
NJD35N04T4G NJD35N04T4G Hersteller : onsemi njd35n04-d.pdf Description: TRANS NPN DARL 350V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 45 W
Produkt ist nicht verfügbar
NJD35N04T4G NJD35N04T4G Hersteller : onsemi njd35n04-d.pdf Description: TRANS NPN DARL 350V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 45 W
Produkt ist nicht verfügbar