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NJT4030PT1G

NJT4030PT1G onsemi

njt4030p-d.pdf
Hersteller: onsemi
Description: TRANS PNP 40V 3A SOT223
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.37 EUR
2000+0.33 EUR
3000+0.32 EUR
5000+0.3 EUR
7000+0.28 EUR
10000+0.27 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NJT4030PT1G onsemi

Description: TRANS PNP 40V 3A SOT223, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: SOT-223 (TO-261), Frequency - Transition: 160MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).

Weitere Produktangebote NJT4030PT1G nach Preis ab 0.26 EUR bis 1.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NJT4030PT1G NJT4030PT1G onsemi NJT4030P_D-1813233.pdf Bipolar Transistors - BJT 40V 3A PNP BIPOLAR POWER TRANSISTOR
auf Bestellung 8539 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.04 EUR
10+0.62 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.31 EUR
2000+0.28 EUR
5000+0.26 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NJT4030PT1G NJT4030PT1G onsemi njt4030p-d.pdf Description: TRANS PNP 40V 3A SOT223
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 15793 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
22+0.83 EUR
100+0.53 EUR
500+0.41 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
NJT4030PT1G NJT4030P_D-1813233.pdf
NJT4030PT1G
Hersteller: onsemi
Bipolar Transistors - BJT 40V 3A PNP BIPOLAR POWER TRANSISTOR
auf Bestellung 8539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.04 EUR
10+0.62 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.31 EUR
2000+0.28 EUR
5000+0.26 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NJT4030PT1G njt4030p-d.pdf
NJT4030PT1G
Hersteller: onsemi
Description: TRANS PNP 40V 3A SOT223
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 15793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
22+0.83 EUR
100+0.53 EUR
500+0.41 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH