NJVMJD122T4G onsemi
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.57 EUR |
| 13+ | 1.62 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.76 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
9 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NJVMJD122T4G onsemi
Description: TRANS NPN DARL 100V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V, Frequency - Transition: 4MHz, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.75 W, Qualification: AEC-Q101.
Weitere Produktangebote NJVMJD122T4G nach Preis ab 0.74 EUR bis 2.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NJVMJD122T4G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2350 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| NJVMJD122T4G | onsemi |
Darlington Transistors BIP DPAK NPN 8A 100V TR |
auf Bestellung 3081 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NJVMJD122T4G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)
| NJVMJD122T4G |
|
Hersteller: onsemi
Darlington Transistors BIP DPAK NPN 8A 100V TR
Darlington Transistors BIP DPAK NPN 8A 100V TR
auf Bestellung 3081 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.51 EUR |
| 10+ | 1.58 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.74 EUR |