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NJVMJD243T4G

NJVMJD243T4G onsemi

mjd243-d.pdf Hersteller: onsemi
Description: TRANS NPN 100V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
auf Bestellung 287500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.53 EUR
5000+0.49 EUR
7500+0.47 EUR
12500+0.44 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NJVMJD243T4G onsemi

Description: TRANS NPN 100V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V, Frequency - Transition: 40MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.4 W.

Weitere Produktangebote NJVMJD243T4G nach Preis ab 0.46 EUR bis 2.04 EUR

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NJVMJD243T4G NJVMJD243T4G Hersteller : onsemi MJD243_D-2315743.pdf Bipolar Transistors - BJT BIP NPN 4A 100V TR
auf Bestellung 11458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.04 EUR
10+0.81 EUR
100+0.67 EUR
500+0.58 EUR
1000+0.54 EUR
2500+0.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD243T4G NJVMJD243T4G Hersteller : onsemi mjd243-d.pdf Description: TRANS NPN 100V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
auf Bestellung 289241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.28 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD243T4G NJVMJD243T4G Hersteller : ON Semiconductor mjd243-d.pdf Trans GP BJT NPN 100V 4A 1400mW Automotive 3-Pin(2+Tab) DPAK T/R
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