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NJVMJD243T4G onsemi


mjd243-d.pdf
Hersteller: onsemi
Description: TRANS NPN 100V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
auf Bestellung 287500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.56 EUR
5000+0.51 EUR
7500+0.49 EUR
12500+0.46 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NJVMJD243T4G onsemi

Description: TRANS NPN 100V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V, Frequency - Transition: 40MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.4 W.

Weitere Produktangebote NJVMJD243T4G nach Preis ab 0.62 EUR bis 2.31 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NJVMJD243T4G NJVMJD243T4G onsemi mjd243-d.pdf Description: TRANS NPN 100V 4A DPAK
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
auf Bestellung 289061 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.14 EUR
16+1.34 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.62 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD243T4G NJVMJD243T4G onsemi mjd243-d.pdf Bipolar Transistors - BJT BIP NPN 4A 100V TR
auf Bestellung 9545 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.31 EUR
10+1.08 EUR
100+0.82 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD243T4G mjd243-d.pdf
Hersteller: onsemi
Description: TRANS NPN 100V 4A DPAK
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
auf Bestellung 289061 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
16+1.34 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.62 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD243T4G mjd243-d.pdf
Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 4A 100V TR
auf Bestellung 9545 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.31 EUR
10+1.08 EUR
100+0.82 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH