auf Bestellung 10000 Stücke:
Lieferzeit 367-371 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.07 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.55 EUR |
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Technische Details NJVMJD253T4G-VF01 onsemi
Description: TRANS PNP 100V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V, Frequency - Transition: 40MHz, Supplier Device Package: DPAK, Grade: Automotive, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 12.5 W, Qualification: AEC-Q101.
Weitere Produktangebote NJVMJD253T4G-VF01
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NJVMJD253T4G-VF01 | Hersteller : onsemi |
 Description: TRANS PNP 100V 4A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Frequency - Transition: 40MHz Supplier Device Package: DPAK Grade: Automotive Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 12.5 W Qualification: AEC-Q101 |
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