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NJVMJD253T4G

NJVMJD253T4G onsemi


MJD243_D-1761368.pdf Hersteller: onsemi
Bipolar Transistors - BJT BIP DPAK PNP 4A 100V TR
auf Bestellung 2068 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.46 EUR
10+1.18 EUR
100+0.89 EUR
500+0.70 EUR
1000+0.63 EUR
2500+0.54 EUR
5000+0.52 EUR
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Technische Details NJVMJD253T4G onsemi

Description: TRANS PNP 100V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V, Frequency - Transition: 40MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.4 W, Grade: Automotive, Qualification: AEC-Q101.

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NJVMJD253T4G NJVMJD253T4G Hersteller : onsemi mjd243-d.pdf Description: TRANS PNP 100V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
Grade: Automotive
Qualification: AEC-Q101
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