NJVMJD31CT4G ON Semiconductor
Hersteller: ON SemiconductorTrans GP BJT NPN 100V 3A 1560mW 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1400+ | 0.39 EUR |
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Technische Details NJVMJD31CT4G ON Semiconductor
Description: TRANS NPN 100V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.56 W, Qualification: AEC-Q101.
Weitere Produktangebote NJVMJD31CT4G nach Preis ab 0.39 EUR bis 1.69 EUR
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NJVMJD31CT4G | Hersteller : onsemi |
Description: TRANS NPN 100V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVMJD31CT4G | Hersteller : onsemi |
Bipolar Transistors - BJT BIP DPAK NPN 3A 100V TR |
auf Bestellung 3237 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVMJD31CT4G | Hersteller : onsemi |
Description: TRANS NPN 100V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W Qualification: AEC-Q101 |
auf Bestellung 3796 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVMJD31CT4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 100V 3A 1560mW Automotive 3-Pin(2+Tab) DPAK T/R |
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NJVMJD31CT4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 100V 3A 1560mW 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NJVMJD31CT4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 100V 3A 1560mW 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NJVMJD31CT4G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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NJVMJD31CT4G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |