NJVMJD31CT4G ON Semiconductor
Hersteller: ON Semiconductor
Trans GP BJT NPN 100V 3A 1560mW 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 1400+ | 0.48 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1400 Stücke
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Technische Details NJVMJD31CT4G ON Semiconductor
Description: TRANS NPN 100V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.56 W, Qualification: AEC-Q101.
Weitere Produktangebote NJVMJD31CT4G nach Preis ab 0.46 EUR bis 2.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NJVMJD31CT4G | onsemi |
Description: TRANS NPN 100V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVMJD31CT4G | onsemi |
Description: TRANS NPN 100V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W Qualification: AEC-Q101 |
auf Bestellung 16878 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVMJD31CT4G | onsemi |
Bipolar Transistors - BJT BIP DPAK NPN 3A 100V TR |
auf Bestellung 4580 Stücke: Lieferzeit 10-14 Tag (e) |
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| NJVMJD31CT4G |
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Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Qualification: AEC-Q101
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.5 EUR |
| 5000+ | 0.46 EUR |
| NJVMJD31CT4G |
|
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Qualification: AEC-Q101
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Qualification: AEC-Q101
auf Bestellung 16878 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 17+ | 1.3 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |
| NJVMJD31CT4G |
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Hersteller: onsemi
Bipolar Transistors - BJT BIP DPAK NPN 3A 100V TR
Bipolar Transistors - BJT BIP DPAK NPN 3A 100V TR
auf Bestellung 4580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.31 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.54 EUR |