Produkte > ONSEMI > NJVMJD32T4G
NJVMJD32T4G

NJVMJD32T4G onsemi

mjd31-d.pdf Hersteller: onsemi
Description: TRANS PNP 40V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
auf Bestellung 1448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.64 EUR
13+ 1.45 EUR
100+ 1.11 EUR
500+ 0.88 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 11
Produktrezensionen
Produktbewertung abgeben

Technische Details NJVMJD32T4G onsemi

Description: TRANS PNP 40V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.56 W.

Weitere Produktangebote NJVMJD32T4G nach Preis ab 0.54 EUR bis 1.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NJVMJD32T4G Hersteller : onsemi MJD31_D-2315971.pdf Bipolar Transistors - BJT BIP DPAK PNP 3A 40V TR
auf Bestellung 3422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.56 EUR
10+ 1.36 EUR
100+ 1.04 EUR
500+ 0.82 EUR
1000+ 0.66 EUR
2500+ 0.6 EUR
10000+ 0.54 EUR
Mindestbestellmenge: 2
NJVMJD32T4G NJVMJD32T4G Hersteller : onsemi mjd31-d.pdf Description: TRANS PNP 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar