NJVMJD32T4G onsemi
Hersteller: onsemi
Description: TRANS PNP 40V 3A DPAK
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.24 EUR |
| 15+ | 1.42 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.65 EUR |
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Technische Details NJVMJD32T4G onsemi
Description: TRANS PNP 40V 3A DPAK, Power - Max: 1.56 W, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 3 A, Part Status: Active, Supplier Device Package: DPAK, Frequency - Transition: 3MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote NJVMJD32T4G nach Preis ab 0.52 EUR bis 2.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NJVMJD32T4G | onsemi |
Bipolar Transistors - BJT BIP DPAK PNP 3A 40V TR |
auf Bestellung 3352 Stücke: Lieferzeit 10-14 Tag (e) |
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| NJVMJD32T4G |
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Hersteller: onsemi
Bipolar Transistors - BJT BIP DPAK PNP 3A 40V TR
Bipolar Transistors - BJT BIP DPAK PNP 3A 40V TR
auf Bestellung 3352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.26 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.67 EUR |
| 2500+ | 0.52 EUR |