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NJVMJD350T4G

NJVMJD350T4G onsemi

mjd340-d.pdf Hersteller: onsemi
Description: TRANS PNP 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.56 W
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.45 EUR
5000+0.41 EUR
7500+0.39 EUR
12500+0.37 EUR
17500+0.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NJVMJD350T4G onsemi

Description: TRANS PNP 300V 0.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Frequency - Transition: 10MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1.56 W.

Weitere Produktangebote NJVMJD350T4G nach Preis ab 0.34 EUR bis 1.78 EUR

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NJVMJD350T4G NJVMJD350T4G Hersteller : onsemi MJD340-D.PDF Bipolar Transistors - BJT BIP PNP 0.5A 300V TR
auf Bestellung 14208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.61 EUR
10+1 EUR
100+0.65 EUR
500+0.51 EUR
1000+0.46 EUR
2500+0.38 EUR
5000+0.34 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD350T4G NJVMJD350T4G Hersteller : onsemi mjd340-d.pdf Description: TRANS PNP 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.56 W
auf Bestellung 22865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.11 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD350T4G Hersteller : ONSEMI mjd340-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
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