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NJVMJD42CT4G

NJVMJD42CT4G onsemi

mjd41c-d.pdf Hersteller: onsemi
Description: TRANS PNP 100V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1625 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.27 EUR
17+ 1.09 EUR
100+ 0.76 EUR
500+ 0.63 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 14
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Technische Details NJVMJD42CT4G onsemi

Description: TRANS PNP 100V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.75 W, Grade: Automotive, Qualification: AEC-Q101.

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NJVMJD42CT4G Hersteller : ON Semiconductor mjd41c-d.pdf
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
NJVMJD42CT4G NJVMJD42CT4G Hersteller : onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NJVMJD42CT4G NJVMJD42CT4G Hersteller : onsemi MJD41C_D-2316115.pdf Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
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