NJX1675PDR2G ON Semiconductor
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Technische Details NJX1675PDR2G ON Semiconductor
Description: TRANS NPN/PNP 30V 3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2W, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A / 170mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Frequency - Transition: 100MHz, 120MHz, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote NJX1675PDR2G
Foto | Bezeichnung | Hersteller | Beschreibung |
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NJX1675PDR2G | Hersteller : onsemi |
Description: TRANS NPN/PNP 30V 3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A / 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz, 120MHz Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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NJX1675PDR2G | Hersteller : onsemi | Bipolar Transistors - BJT NPN/PNP +/- 30V +/- 6A |
Produkt ist nicht verfügbar |