NJX1675PDR2G onsemi
Hersteller: onsemiDescription: TRANS NPN/PNP 30V 3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A / 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz, 120MHz
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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Technische Details NJX1675PDR2G onsemi
Description: TRANS NPN/PNP 30V 3A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2W, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A / 170mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Frequency - Transition: 100MHz, 120MHz, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote NJX1675PDR2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NJX1675PDR2G | Hersteller : onsemi |
Bipolar Transistors - BJT NPN/PNP +/- 30V +/- 6A |
Produkt ist nicht verfügbar |