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NP100P06PDG-E1-AY

NP100P06PDG-E1-AY Renesas Electronics

r07ds1515ej0100_np100p06pdg-3075888.pdf Hersteller: Renesas Electronics
MOSFET LOW VOLTAGE POWER MOSFET
auf Bestellung 12859 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.5 EUR
10+ 7.62 EUR
100+ 6.25 EUR
500+ 5.32 EUR
800+ 4.33 EUR
2400+ 4.28 EUR
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Technische Details NP100P06PDG-E1-AY Renesas Electronics

Description: MOSFET P-CH 60V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V, Power Dissipation (Max): 1.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-263, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V.

Weitere Produktangebote NP100P06PDG-E1-AY nach Preis ab 5.8 EUR bis 8.54 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NP100P06PDG-E1-AY NP100P06PDG-E1-AY Hersteller : Renesas Electronics Corporation np100p06pdg-datasheet Description: MOSFET P-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.54 EUR
10+ 7.17 EUR
100+ 5.8 EUR
Mindestbestellmenge: 3
NP100P06PDG-E1-AY Hersteller : Renesas np100p06pdg-datasheet TO263/P-channel MOS Field Effect Transistor POWERMOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
NP100P06PDG-E1-AY NP100P06PDG-E1-AY Hersteller : Renesas Electronics Corporation np100p06pdg-datasheet Description: MOSFET P-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Produkt ist nicht verfügbar