NP110N03PUG-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details NP110N03PUG-E1-AY Renesas Electronics Corporation
Description: MOSFET N-CH 30V 110A TO263, Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 288W (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 55A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).