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NP110N04PUK-E1-AY

NP110N04PUK-E1-AY Renesas Electronics

REN_r07ds0570ej0200_pomosfet_DST_20180524-2930607.pdf Hersteller: Renesas Electronics
MOSFET POWER MOSFET
auf Bestellung 793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.1 EUR
10+ 7.64 EUR
25+ 7.39 EUR
100+ 6.2 EUR
250+ 5.98 EUR
500+ 5.49 EUR
800+ 4.42 EUR
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Technische Details NP110N04PUK-E1-AY Renesas Electronics

Description: MOSFET N-CH 40V 110A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V, Power Dissipation (Max): 1.8W (Ta), 348W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V.

Weitere Produktangebote NP110N04PUK-E1-AY nach Preis ab 6.22 EUR bis 9.17 EUR

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Preis ohne MwSt
NP110N04PUK-E1-AY NP110N04PUK-E1-AY Hersteller : Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
auf Bestellung 1554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.17 EUR
10+ 7.69 EUR
100+ 6.22 EUR
Mindestbestellmenge: 2
NP110N04PUK-E1-AY NP110N04PUK-E1-AY Hersteller : Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
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