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NP110N04PUK-E1-AY

NP110N04PUK-E1-AY Renesas Electronics Corporation

np110n04pukmos-field-effect-transistor Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
auf Bestellung 1551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.89 EUR
10+6.24 EUR
100+4.67 EUR
Mindestbestellmenge: 2
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Technische Details NP110N04PUK-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 40V 110A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V, Power Dissipation (Max): 1.8W (Ta), 348W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V.

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NP110N04PUK-E1-AY NP110N04PUK-E1-AY Hersteller : Renesas Electronics REN_r07ds0570ej0200_pomosfet_DST_20180524-2930607.pdf MOSFETs POWER MOSFET
auf Bestellung 784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.10 EUR
10+7.64 EUR
25+7.52 EUR
100+6.20 EUR
250+6.09 EUR
500+5.81 EUR
800+4.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NP110N04PUK-E1-AY NP110N04PUK-E1-AY Hersteller : Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH