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NP160N055TUJ-E1-AY

NP160N055TUJ-E1-AY Renesas


r07ds0022ej0100_pomosfet.pdf Hersteller: Renesas
Description: NP160N055TUJ-E1-AY - SWITCHINGN-
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
113+4.13 EUR
Mindestbestellmenge: 113
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Technische Details NP160N055TUJ-E1-AY Renesas

Description: NP160N055TUJ-E1-AY - SWITCHINGN-, Packaging: Bulk, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V, Power Dissipation (Max): 1.8W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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NP160N055TUJ-E1-AY NP160N055TUJ-E1-AY Hersteller : Renesas 1804573999062763r07ds0022ej0100_pomosfet.pdf Trans MOSFET N-CH 55V 160A Automotive 7-Pin(6+Tab) D2PAK T/R
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NP160N055TUJ-E1-AY Hersteller : Renesas Electronics Corporation np160n055tuj-data-sheet Description: MOSFET N-CH 55V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH