NP160N055TUK-E1-AY

NP160N055TUK-E1-AY Renesas Electronics Corporation


np160n055tukmos-field-effect-transistor Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.10 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NP160N055TUK-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 55V 160A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V, Power Dissipation (Max): 1.8W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NP160N055TUK-E1-AY nach Preis ab 3.94 EUR bis 8.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NP160N055TUK-E1-AY NP160N055TUK-E1-AY Hersteller : Renesas Electronics Corporation np160n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.27 EUR
10+5.51 EUR
100+3.94 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NP160N055TUK-E1-AY NP160N055TUK-E1-AY Hersteller : Renesas Electronics REN_r07ds0592ej0200_pomosfet__DST_20180524-2930616.pdf MOSFET LOW VOLTAGE POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH