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NP16N06QLK-E1-AY

NP16N06QLK-E1-AY Renesas Electronics Corporation

np16n06qlk60-v-16-dual-n-channel-power-mos-fetapplication-automotive Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 16A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.49 EUR
Mindestbestellmenge: 2500
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Technische Details NP16N06QLK-E1-AY Renesas Electronics Corporation

Description: MOSFET 2N-CH 60V 16A 8HSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), 25W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V, Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-HSON (5x5.4), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote NP16N06QLK-E1-AY nach Preis ab 1.57 EUR bis 3.29 EUR

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NP16N06QLK-E1-AY NP16N06QLK-E1-AY Hersteller : Renesas Electronics Corporation np16n06qlk60-v-16-dual-n-channel-power-mos-fetapplication-automotive Description: MOSFET 2N-CH 60V 16A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.29 EUR
10+ 2.74 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.57 EUR
Mindestbestellmenge: 6
NP16N06QLK-E1-AY NP16N06QLK-E1-AY Hersteller : Renesas Electronics REN_r07ds1290ej0200_pomosfet_DST_20180524-2930804.pdf MOSFET POWER TRANSISTOR AUTOMOTIVE MOS 8P
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