NP16N06QLK-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 16A 8HSON
Part Status: Active
Supplier Device Package: 8-HSON (5x5.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W (Ta), 25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produktrezensionen
Produktbewertung abgeben
Technische Details NP16N06QLK-E1-AY Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 16A 8HSON, Part Status: Active, Supplier Device Package: 8-HSON (5x5.4), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 1W (Ta), 25W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NP16N06QLK-E1-AY nach Preis ab 1.92 EUR bis 5.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NP16N06QLK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET 2N-CH 60V 16A 8HSON Part Status: Active Supplier Device Package: 8-HSON (5x5.4) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 1W (Ta), 25W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 4125 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NP16N06QLK-E1-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 16A 8HSON
Part Status: Active
Supplier Device Package: 8-HSON (5x5.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W (Ta), 25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 60V 16A 8HSON
Part Status: Active
Supplier Device Package: 8-HSON (5x5.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W (Ta), 25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.26 EUR |
| 10+ | 3.39 EUR |
| 100+ | 2.33 EUR |
| 500+ | 1.92 EUR |