NP179N055TUK-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: P-TRS2 AUTOMOTIVE MOS
Packaging: Tray
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 12.92 EUR |
| 10+ | 11.07 EUR |
| 25+ | 10.31 EUR |
| 80+ | 9.23 EUR |
| 230+ | 8.69 EUR |
| 800+ | 8.14 EUR |
| 1600+ | 7.33 EUR |
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Technische Details NP179N055TUK-E1-AY Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS, Packaging: Tray, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 1.75mOhm @ 90A, 10V, Power Dissipation (Max): 1.8W (Ta), 288W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13950 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.