NP20P06SLG-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V
Power Dissipation (Max): 1.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.26 EUR |
| 5000+ | 1.18 EUR |
| 7500+ | 1.14 EUR |
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Technische Details NP20P06SLG-E1-AY Renesas Electronics Corporation
Description: MOSFET P-CH 60V 20A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V, Power Dissipation (Max): 1.2W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (MP-3ZK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NP20P06SLG-E1-AY nach Preis ab 1.31 EUR bis 4.4 EUR
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NP20P06SLG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 60V 20A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V Power Dissipation (Max): 1.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10380 Stücke: Lieferzeit 10-14 Tag (e) |
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NP20P06SLG-E1-AY | Renesas Electronics |
MOSFETs Pch Power MOSFET -60V -20A 48mohm TO-252 / DPAK |
auf Bestellung 3124 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NP20P06SLG-E1-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V
Power Dissipation (Max): 1.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V
Power Dissipation (Max): 1.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.33 EUR |
| 10+ | 2.78 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.39 EUR |
| NP20P06SLG-E1-AY |
|
Hersteller: Renesas Electronics
MOSFETs Pch Power MOSFET -60V -20A 48mohm TO-252 / DPAK
MOSFETs Pch Power MOSFET -60V -20A 48mohm TO-252 / DPAK
auf Bestellung 3124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.4 EUR |
| 10+ | 2.83 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.4 EUR |
| 2500+ | 1.31 EUR |