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NP30N06QDK-E1-AY

NP30N06QDK-E1-AY Renesas Electronics Corporation

np30n06qdk60-v-30-dual-n-channel-power-mos-fetapplication-automotive?r=499471
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 30A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 59W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2460 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.74 EUR
10+3.72 EUR
100+2.58 EUR
500+2.19 EUR
Mindestbestellmenge: 4 Stücke
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Technische Details NP30N06QDK-E1-AY Renesas Electronics Corporation

Description: MOSFET 2N-CH 60V 30A 8HSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), 59W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V, Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-HSON (5x5.4), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote NP30N06QDK-E1-AY

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NP30N06QDK-E1-AY NP30N06QDK-E1-AY Renesas Electronics Corporation np30n06qdk60-v-30-dual-n-channel-power-mos-fetapplication-automotive?r=499471 Description: MOSFET 2N-CH 60V 30A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 59W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP30N06QDK-E1-AY NP30N06QDK-E1-AY Renesas Electronics REN_r07ds1332ej0200-pomosfet_DST_20180524.pdf MOSFETs Nch Power MOSFET 60V 30A 14mohm SON-8 5x6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NP30N06QDK-E1-AY np30n06qdk60-v-30-dual-n-channel-power-mos-fetapplication-automotive?r=499471
NP30N06QDK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 30A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 59W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NP30N06QDK-E1-AY REN_r07ds1332ej0200-pomosfet_DST_20180524.pdf
NP30N06QDK-E1-AY
Hersteller: Renesas Electronics
MOSFETs Nch Power MOSFET 60V 30A 14mohm SON-8 5x6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH