NP40N055KLE-E1-AY

NP40N055KLE-E1-AY Renesas Electronics Corporation


RNCCS18638-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 40A TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.8W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
auf Bestellung 1600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
307+1.59 EUR
Mindestbestellmenge: 307
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Technische Details NP40N055KLE-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 55V 40A TO263, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Power Dissipation (Max): 1.8W (Ta), 66W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263, Part Status: Obsolete, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V.

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NP40N055KLE-E1-AY NP40N055KLE-E1-AY Hersteller : Renesas 945d14093ej7v0ds00.pdf Trans MOSFET N-CH 55V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
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