NP50P06SDG-E1-AY

NP50P06SDG-E1-AY Renesas Electronics Corporation


np50p06sdg-data-sheet Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.47 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NP50P06SDG-E1-AY Renesas Electronics Corporation

Description: MOSFET P-CH 60V 50A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V, Power Dissipation (Max): 1.2W (Ta), 84W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (MP-3ZK), Part Status: Active, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NP50P06SDG-E1-AY nach Preis ab 1.63 EUR bis 4.29 EUR

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NP50P06SDG-E1-AY NP50P06SDG-E1-AY Hersteller : Renesas 1795009872059010d19073ej2v0ds00.pdf Trans MOSFET P-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.49 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP50P06SDG-E1-AY NP50P06SDG-E1-AY Hersteller : Renesas Electronics Corporation np50p06sdg-data-sheet Description: MOSFET P-CH 60V 50A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 62472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+3.06 EUR
100+2.12 EUR
500+1.84 EUR
1000+1.77 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NP50P06SDG-E1-AY NP50P06SDG-E1-AY Hersteller : Renesas Electronics r07ds1511ej0101_np50p06sdg-3075769.pdf MOSFETs AUTOMOTIVE MOS MP-3ZK UMOS4
auf Bestellung 4479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.29 EUR
10+3.20 EUR
100+2.31 EUR
500+2.09 EUR
1000+1.78 EUR
2500+1.67 EUR
5000+1.63 EUR
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NP50P06SDG-E1-AY Hersteller : Renesas np50p06sdg-data-sheet TO-252/P-channel MOS Field Effect Transistor POWERMOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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