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NP75N04YLG-E1-AY

NP75N04YLG-E1-AY Renesas Electronics Corporation

np75n04ylg-data-sheet Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.49 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NP75N04YLG-E1-AY Renesas Electronics Corporation

Description: ABU / MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V, Power Dissipation (Max): 138W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-HSON (5x5.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NP75N04YLG-E1-AY nach Preis ab 1.59 EUR bis 4.93 EUR

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NP75N04YLG-E1-AY NP75N04YLG-E1-AY Hersteller : Renesas Electronics REN_r07ds1247ej0100_pomosfet_DST_20150302-2930549.pdf MOSFETs POWER TRS2
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.52 EUR
10+2.92 EUR
100+2.34 EUR
250+2.24 EUR
500+1.97 EUR
1000+1.67 EUR
2500+1.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NP75N04YLG-E1-AY NP75N04YLG-E1-AY Hersteller : Renesas Electronics Corporation np75n04ylg-data-sheet Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
10+3.19 EUR
100+2.2 EUR
500+1.78 EUR
1000+1.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH