NP75N04YLG-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.49 EUR |
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Technische Details NP75N04YLG-E1-AY Renesas Electronics Corporation
Description: ABU / MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V, Power Dissipation (Max): 138W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-HSON (5x5.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NP75N04YLG-E1-AY nach Preis ab 1.39 EUR bis 4.93 EUR
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NP75N04YLG-E1-AY | Hersteller : Renesas Electronics |
MOSFETs Nch Power MOSFET 40V 75A 4.8mohm SON-8 5x6 |
auf Bestellung 2360 Stücke: Lieferzeit 10-14 Tag (e) |
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NP75N04YLG-E1-AY | Hersteller : Renesas Electronics Corporation |
Description: ABU / MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V Power Dissipation (Max): 138W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON (5x5.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2929 Stücke: Lieferzeit 10-14 Tag (e) |
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