NP75P03YDG-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET P-CH 30V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.74 EUR |
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Technische Details NP75P03YDG-E1-AY Renesas Electronics Corporation
Description: MOSFET P-CH 30V 75A 8HSON, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V, Power Dissipation (Max): 1W (Ta), 138W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-HSON, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Weitere Produktangebote NP75P03YDG-E1-AY nach Preis ab 1.5 EUR bis 3.85 EUR
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NP75P03YDG-E1-AY | Hersteller : Renesas Electronics |
MOSFET MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 185-189 Tag (e) |
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NP75P03YDG-E1-AY | Hersteller : Renesas Electronics Corporation |
Description: MOSFET P-CH 30V 75A 8HSON Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
auf Bestellung 6239 Stücke: Lieferzeit 10-14 Tag (e) |
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