NP82N04MLG-S18-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 82A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 128+ | 3.82 EUR |
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Technische Details NP82N04MLG-S18-AY Renesas Electronics Corporation
Description: MOSFET N-CH 40V 82A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 143W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.