NP82N06NLG-S18-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 60V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 135+ | 5.38 EUR |
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Technische Details NP82N06NLG-S18-AY Renesas Electronics Corporation
Description: MOSFET N-CH 60V 82A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 41A, 10V, Power Dissipation (Max): 1.8W (Ta), 143W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-262, Grade: Automotive, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V, Qualification: AEC-Q101.