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NP83P06PDG-E1-AY

NP83P06PDG-E1-AY Renesas Electronics America Inc

np83p06pdg-data-sheet Hersteller: Renesas Electronics America Inc
Description: MOSFET P-CH 60V 83A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 41.5A, 10V
Power Dissipation (Max): 1.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+3.04 EUR
Mindestbestellmenge: 800
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Technische Details NP83P06PDG-E1-AY Renesas Electronics America Inc

Description: MOSFET P-CH 60V 83A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 41.5A, 10V, Power Dissipation (Max): 1.8W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V.

Weitere Produktangebote NP83P06PDG-E1-AY nach Preis ab 4.03 EUR bis 5.47 EUR

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Preis ohne MwSt
NP83P06PDG-E1-AY NP83P06PDG-E1-AY Hersteller : Renesas Electronics America Inc np83p06pdg-data-sheet Description: MOSFET P-CH 60V 83A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 41.5A, 10V
Power Dissipation (Max): 1.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.47 EUR
10+ 4.91 EUR
100+ 4.03 EUR
Mindestbestellmenge: 4
NP83P06PDG-E1-AY Hersteller : Renesas np83p06pdg-data-sheet TO-263/MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET POWERMOSFET
Anzahl je Verpackung: 800 Stücke
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