NP83P06PDG-E1-AY Renesas Electronics America Inc
Hersteller: Renesas Electronics America IncDescription: MOSFET P-CH 60V 83A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 41.5A, 10V
Power Dissipation (Max): 1.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 3.04 EUR |
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Technische Details NP83P06PDG-E1-AY Renesas Electronics America Inc
Description: MOSFET P-CH 60V 83A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 41.5A, 10V, Power Dissipation (Max): 1.8W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V.
Weitere Produktangebote NP83P06PDG-E1-AY nach Preis ab 4.03 EUR bis 5.47 EUR
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NP83P06PDG-E1-AY | Hersteller : Renesas Electronics America Inc |
Description: MOSFET P-CH 60V 83A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 41.5A, 10V Power Dissipation (Max): 1.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V |
auf Bestellung 2390 Stücke: Lieferzeit 10-14 Tag (e) |
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| NP83P06PDG-E1-AY | Hersteller : Renesas |
TO-263/MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET POWERMOSFET Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |