NP88N04NUG-S18-AY Renesas
auf Bestellung 1450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 130+ | 4.14 EUR |
| 500+ | 3.79 EUR |
| 1000+ | 3.43 EUR |
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Technische Details NP88N04NUG-S18-AY Renesas
Description: NP88N04NUG-S18-AY - MOS FIELD EF, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 44A, 10V, Power Dissipation (Max): 1.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V.
Weitere Produktangebote NP88N04NUG-S18-AY nach Preis ab 4.4 EUR bis 4.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NP88N04NUG-S18-AY | Hersteller : Renesas |
 Description: NP88N04NUG-S18-AY - MOS FIELD EFPackaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 44A, 10V Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V |
auf Bestellung 1450 Stücke: Lieferzeit 10-14 Tag (e) |
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