NP90N04MUG-S18-AY Renesas
Hersteller: RenesasTO220-3/N-CHANNEL POWER MOS FET VDSS=40V, ID=90A, RDSON=3MOHM NP90N04
Anzahl je Verpackung: 50 Stücke
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Technische Details NP90N04MUG-S18-AY Renesas
Description: MOSFET N-CH 40V 90A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 45A, 10V, Power Dissipation (Max): 1.8W (Ta), 217W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V.
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NP90N04MUG-S18-AY | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 90A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 45A, 10V Power Dissipation (Max): 1.8W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V |
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