Produkte > ONSEMI > NRVHP820MFDT1G
NRVHP820MFDT1G

NRVHP820MFDT1G onsemi


nhp820mfd-d.pdf Hersteller: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1382 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+1.83 EUR
100+1.2 EUR
500+1.15 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NRVHP820MFDT1G onsemi

Description: DIODE ARRAY GP 200V 4A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 4A, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Qualification: AEC-Q101.

Weitere Produktangebote NRVHP820MFDT1G nach Preis ab 0.96 EUR bis 2.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NRVHP820MFDT1G NRVHP820MFDT1G Hersteller : onsemi 08B16DE85531CE659A5CF5687A046827B7504C5F7B50B94D03A404E3076444A8.pdf Rectifiers 200V/4A PUF DFN-8
auf Bestellung 947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.71 EUR
10+1.87 EUR
100+1.06 EUR
500+1.05 EUR
1500+0.96 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NRVHP820MFDT1G Hersteller : ON Semiconductor nhp820mfd-d.pdf
auf Bestellung 1450 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NRVHP820MFDT1G NRVHP820MFDT1G Hersteller : ON Semiconductor nhp820mfd-d.pdf Rectifier Diode Switching 200V 4A 30ns Automotive 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVHP820MFDT1G Hersteller : ONSEMI nhp820mfd-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Reverse recovery time: 50ns
Kind of package: reel; tape
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Type of diode: rectifying
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Semiconductor structure: double independent
Case: DFN8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVHP820MFDT1G NRVHP820MFDT1G Hersteller : onsemi nhp820mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVHP820MFDT1G Hersteller : ONSEMI nhp820mfd-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Reverse recovery time: 50ns
Kind of package: reel; tape
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Type of diode: rectifying
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Semiconductor structure: double independent
Case: DFN8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH