auf Bestellung 8695 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NRVHPM120T3G onsemi
Description: DIODE GEN PURP 200V 1A POWERMITE, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: Powermite, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NRVHPM120T3G nach Preis ab 0.3 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NRVHPM120T3G | Hersteller : onsemi |
Description: DIODE GEN PURP 200V 1A POWERMITEPackaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9984 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NRVHPM120T3G | Hersteller : ON Semiconductor |
Diode Switching 200V 1A Automotive AEC-Q101 2-Pin(1+Tab) Power Mite T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
NRVHPM120T3G | Hersteller : onsemi |
Description: DIODE GEN PURP 200V 1A POWERMITEPackaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
| NRVHPM120T3G | Hersteller : ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Application: automotive industry Case: POWERMITE Mounting: SMD Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Reverse recovery time: 50ns Load current: 1A Max. forward voltage: 1.1V Max. load current: 2A Max. forward impulse current: 30A Max. off-state voltage: 200V |
Produkt ist nicht verfügbar |

