NSBA114EDP6T5G onsemi
Hersteller: onsemiDescription: TRANS PREBIAS 2PNP 50V SOT963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 338mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
auf Bestellung 160000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3275+ | 0.22 EUR |
Produktrezensionen
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Technische Details NSBA114EDP6T5G onsemi
Description: TRANS PREBIAS 2PNP 50V SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 338mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-963.
Weitere Produktangebote NSBA114EDP6T5G nach Preis ab 0.21 EUR bis 0.87 EUR
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NSBA114EDP6T5G | Hersteller : onsemi |
Digital Transistors SOT-963 DUAL PBRT |
auf Bestellung 9949 Stücke: Lieferzeit 14-28 Tag (e) |
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| NSBA114EDP6T5G | Hersteller : ON Semiconductor |
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auf Bestellung 15990 Stücke: Lieferzeit 21-28 Tag (e) |
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NSBA114EDP6T5G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
Produkt ist nicht verfügbar |
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NSBA114EDP6T5G | Hersteller : onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 338mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 |
Produkt ist nicht verfügbar |
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NSBA114EDP6T5G | Hersteller : onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 338mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 |
Produkt ist nicht verfügbar |