NSBA144EDXV6T1 onsemi
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
auf Bestellung 32000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSBA144EDXV6T1 onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased, Power - Max: 357mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-563.
Weitere Produktangebote NSBA144EDXV6T1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
NSBA144EDXV6T1 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |