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NSBA144EDXV6T5G

NSBA144EDXV6T5G onsemi

NSBA114EDXV6-D.pdf Hersteller: onsemi
Description: TRANS PREBIAS PNP DL 50V SOT563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhm
Resistor - Emitter Base (R2): 47kOhm
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3602+0.13 EUR
Mindestbestellmenge: 3602
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Technische Details NSBA144EDXV6T5G onsemi

Description: TRANS PREBIAS PNP DL 50V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 357mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 47kOhm, Resistor - Emitter Base (R2): 47kOhm, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSBA144EDXV6T5G nach Preis ab 0.27 EUR bis 0.83 EUR

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NSBA144EDXV6T5G NSBA144EDXV6T5G Hersteller : onsemi DTA144ED_D-1773529.pdf Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
auf Bestellung 6964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.83 EUR
10+ 0.63 EUR
100+ 0.39 EUR
500+ 0.27 EUR
Mindestbestellmenge: 4
NSBA144EDXV6T5G NSBA144EDXV6T5G Hersteller : onsemi NSBA114EDXV6-D.pdf Description: TRANS PREBIAS PNP DL 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhm
Resistor - Emitter Base (R2): 47kOhm
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
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