NSBA144WDXV6T1G onsemi
auf Bestellung 3679 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.12 EUR |
| 4000+ | 0.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSBA144WDXV6T1G onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SOT-563.
Weitere Produktangebote NSBA144WDXV6T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NSBA144WDXV6T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
|
 |
NSBA144WDXV6T1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
|
 |
NSBA144WDXV6T1G | Hersteller : onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |
|
|
|
NSBA144WDXV6T1G | Hersteller : onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |
|
| NSBA144WDXV6T1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 4000pcs. Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 22kΩ Collector-emitter voltage: 50V Current gain: 80...140 Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.5W Polarisation: bipolar |
Produkt ist nicht verfügbar |