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NSBC113EPDXV6T1G

NSBC113EPDXV6T1G onsemi

dtc113ep-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhm
Resistor - Emitter Base (R2): 1kOhm
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.12 EUR
8000+0.11 EUR
20000+0.1 EUR
28000+0.096 EUR
40000+0.092 EUR
100000+0.084 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSBC113EPDXV6T1G onsemi

Description: TRANS PREBIAS NPN/PNP SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Resistor - Base (R1): 1kOhm, Resistor - Emitter Base (R2): 1kOhm, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSBC113EPDXV6T1G nach Preis ab 0.11 EUR bis 0.64 EUR

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NSBC113EPDXV6T1G NSBC113EPDXV6T1G Hersteller : onsemi dtc113ep-d.pdf Description: TRANS PREBIAS NPN/PNP SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhm
Resistor - Emitter Base (R2): 1kOhm
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.16 EUR
8000+0.15 EUR
12000+0.14 EUR
20000+0.13 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
NSBC113EPDXV6T1G NSBC113EPDXV6T1G Hersteller : onsemi dtc113ep-d.pdf Description: TRANS PREBIAS NPN/PNP SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhm
Resistor - Emitter Base (R2): 1kOhm
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
NSBC113EPDXV6T1G NSBC113EPDXV6T1G Hersteller : onsemi dtc113ep-d.pdf Description: TRANS PREBIAS NPN/PNP SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhm
Resistor - Emitter Base (R2): 1kOhm
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
43+0.41 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
NSBC113EPDXV6T1G NSBC113EPDXV6T1G Hersteller : onsemi DTC113EP-D.PDF Digital Transistors 50V Dual Bipolar Digital Transistor
auf Bestellung 7779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.64 EUR
10+0.56 EUR
100+0.4 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.12 EUR
4000+0.11 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NSBC113EPDXV6T1G Hersteller : ONSEMI dtc113ep-d.pdf Description: ONSEMI - NSBC113EPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 192000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NSBC113EPDXV6T1G Hersteller : ONSEMI dtc113ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Type of transistor: NPN / PNP
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 3...5
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Case: SOT563
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