Technische Details NSBC114EPDP6T5G ON Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP SOT-963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 339mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-963, Part Status: Active.
Weitere Produktangebote NSBC114EPDP6T5G nach Preis ab 0.073 EUR bis 0.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NSBC114EPDP6T5G | ON Semiconductor |
 Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
auf Bestellung 11700 Stücke: Lieferzeit 14-21 Tag (e) |
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NSBC114EPDP6T5G | ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSBC114EPDP6T5G | ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSBC114EPDP6T5G | onsemi |
Digital Transistors SOT-963 COMP NBRT |
auf Bestellung 7406 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC114EPDP6T5G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 Part Status: Active |
auf Bestellung 674 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDP6T5G | ONSEMI |
Description: ONSEMI - NSBC114EPDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 127970 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EPDP6T5G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
auf Bestellung 11700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2387+ | 0.073 EUR |
| NSBC114EPDP6T5G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.08 EUR |
| NSBC114EPDP6T5G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.14 EUR |
| NSBC114EPDP6T5G |
|
Hersteller: onsemi
Digital Transistors SOT-963 COMP NBRT
Digital Transistors SOT-963 COMP NBRT
auf Bestellung 7406 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.49 EUR |
| 12+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.13 EUR |
| 5000+ | 0.11 EUR |
| NSBC114EPDP6T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Part Status: Active
auf Bestellung 674 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 0.61 EUR |
| 57+ | 0.37 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| NSBC114EPDP6T5G |
|
Hersteller: ONSEMI
Description: ONSEMI - NSBC114EPDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - NSBC114EPDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 127970 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.13 EUR |