NSBC114EPDP6T5G ON Semiconductor
auf Bestellung 11700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2387+ | 0.06 EUR |
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Technische Details NSBC114EPDP6T5G ON Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP SOT-963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 339mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-963, Part Status: Active.
Weitere Produktangebote NSBC114EPDP6T5G nach Preis ab 0.06 EUR bis 0.51 EUR
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NSBC114EPDP6T5G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
auf Bestellung 11700 Stücke: Lieferzeit 14-21 Tag (e) |
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NSBC114EPDP6T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSBC114EPDP6T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSBC114EPDP6T5G | Hersteller : onsemi |
Digital Transistors SOT-963 COMP NBRT |
auf Bestellung 7406 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC114EPDP6T5G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 Part Status: Active |
auf Bestellung 674 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC114EPDP6T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EPDP6T5G | Hersteller : ONSEMI |
Description: ONSEMI - NSBC114EPDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 127970 Stücke: Lieferzeit 14-21 Tag (e) |
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NSBC114EPDP6T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
Produkt ist nicht verfügbar |
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NSBC114EPDP6T5G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 Part Status: Active |
Produkt ist nicht verfügbar |
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| NSBC114EPDP6T5G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 35...60 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |