NSBC114EPDXV6T1G onsemi
auf Bestellung 84585 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 0.33 EUR |
| 13+ | 0.22 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.099 EUR |
| 4000+ | 0.093 EUR |
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Produktbewertung abgeben
Technische Details NSBC114EPDXV6T1G onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-563.
Weitere Produktangebote NSBC114EPDXV6T1G nach Preis ab 0.13 EUR bis 0.56 EUR
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NSBC114EPDXV6T1G | Hersteller : onsemi |
 Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 |
auf Bestellung 3714 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDXV6T1G | Hersteller : ON Semiconductor |
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auf Bestellung 3900 Stücke: Lieferzeit 21-28 Tag (e) |
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NSBC114EPDXV6T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
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NSBC114EPDXV6T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |