NSBC114YDP6T5G onsemi
Hersteller: onsemiDescription: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.092 EUR |
| 16000+ | 0.084 EUR |
| 24000+ | 0.08 EUR |
| 40000+ | 0.075 EUR |
| 56000+ | 0.073 EUR |
| 80000+ | 0.07 EUR |
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Technische Details NSBC114YDP6T5G onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 339mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-963.
Weitere Produktangebote NSBC114YDP6T5G nach Preis ab 0.099 EUR bis 0.51 EUR
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NSBC114YDP6T5G | Hersteller : onsemi |
Digital Transistors SOT-963 DUAL NBRT |
auf Bestellung 32937 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC114YDP6T5G | Hersteller : onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 |
auf Bestellung 122126 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114YDP6T5G | Hersteller : ON Semiconductor |
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auf Bestellung 7690 Stücke: Lieferzeit 21-28 Tag (e) |
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| NSBC114YDP6T5G | Hersteller : ONSEMI |
Description: ONSEMI - NSBC114YDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJTtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 182991 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114YDP6T5G | Hersteller : ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 80...140 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
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