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NSBC114YPDP6T5G

NSBC114YPDP6T5G onsemi

dtc114yp-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Part Status: Active
auf Bestellung 368000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.092 EUR
16000+0.084 EUR
24000+0.08 EUR
40000+0.075 EUR
56000+0.073 EUR
80000+0.07 EUR
200000+0.066 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSBC114YPDP6T5G onsemi

Description: TRANS PREBIAS 1NPN 1PNP SOT-963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 339mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-963, Part Status: Active.

Weitere Produktangebote NSBC114YPDP6T5G nach Preis ab 0.1 EUR bis 0.51 EUR

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NSBC114YPDP6T5G NSBC114YPDP6T5G Hersteller : onsemi DTC114YP-D.PDF Digital Transistors COMP NBRT/PBRT TR SOT-963
auf Bestellung 5100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.51 EUR
10+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.12 EUR
2500+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114YPDP6T5G NSBC114YPDP6T5G Hersteller : onsemi dtc114yp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Part Status: Active
auf Bestellung 371274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114YPDP6T5G Hersteller : ONSEMI RE_DSHEET_NSBC114YPDP6T5G-ROC.pdf?t.download=true&u=h6ohhb Description: ONSEMI - NSBC114YPDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 595000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114YPDP6T5G Hersteller : ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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Im Einkaufswagen  Stück im Wert von  UAH