NSBC123EDXV6T1G onsemi
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SOT-563
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.14 EUR |
| 8000+ | 0.13 EUR |
| 20000+ | 0.12 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NSBC123EDXV6T1G onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 2.2kOhms, Supplier Device Package: SOT-563.
Weitere Produktangebote NSBC123EDXV6T1G nach Preis ab 0.12 EUR bis 0.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NSBC123EDXV6T1G | onsemi |
Description: TRANS 2NPN PREBIAS 0.5W SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 2.2kOhms Supplier Device Package: SOT-563 |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123EDXV6T1G | onsemi |
Digital Transistors 100mA 50V Dual NPN |
auf Bestellung 3684 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NSBC123EDXV6T1G |
|
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SOT-563
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SOT-563
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| NSBC123EDXV6T1G |
|
Hersteller: onsemi
Digital Transistors 100mA 50V Dual NPN
Digital Transistors 100mA 50V Dual NPN
auf Bestellung 3684 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.33 EUR |
| 2000+ | 0.29 EUR |
| 4000+ | 0.12 EUR |