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NSBC123EDXV6T1G

NSBC123EDXV6T1G onsemi


dtc123ed-d.pdf Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SOT-563
auf Bestellung 24000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.12 EUR
8000+0.11 EUR
20000+0.10 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSBC123EDXV6T1G onsemi

Description: TRANS 2NPN PREBIAS 0.5W SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 2.2kOhms, Supplier Device Package: SOT-563.

Weitere Produktangebote NSBC123EDXV6T1G nach Preis ab 0.08 EUR bis 0.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NSBC123EDXV6T1G NSBC123EDXV6T1G Hersteller : onsemi dtc123ed-d.pdf Digital Transistors 100mA 50V Dual NPN
auf Bestellung 7884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.54 EUR
10+0.52 EUR
1000+0.15 EUR
4000+0.13 EUR
8000+0.09 EUR
24000+0.08 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NSBC123EDXV6T1G NSBC123EDXV6T1G Hersteller : onsemi dtc123ed-d.pdf Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SOT-563
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH