NSBC123EF3T5G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
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Technische Details NSBC123EF3T5G onsemi
Description: TRANS PREBIAS NPN 50V SOT1123, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 254 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-1123, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-1123, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSBC123EF3T5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NSBC123EF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 254 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-1123 DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSBC123EF3T5G | ON Semiconductor |
Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSBC123EF3T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123EF3T5G |
|
Hersteller: ON Semiconductor
Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH