Produkte > ONSEMI > NSBC123EPDXV6T1G

NSBC123EPDXV6T1G onsemi

Hersteller: onsemi
Digital Transistors 50V Dual Bipolar Digital Transistor

auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
4+	0.72 EUR
100+	0.37 EUR
1000+	0.15 EUR
4000+	0.13 EUR
8000+	0.10 EUR
24000+	0.10 EUR

Mindestbestellmenge: 4

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details NSBC123EPDXV6T1G onsemi

Description: TRANS PREBIAS NPN/PNP 50V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 2.2kOhms, Supplier Device Package: SOT-563.

Weitere Produktangebote NSBC123EPDXV6T1G

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	NSBC123EPDXV6T1G	Hersteller : onsemi	Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 2.2kOhms Supplier Device Package: SOT-563	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
	NSBC123EPDXV6T1G	Hersteller : onsemi	Description: TRANS PREBIAS NPN/PNP 50V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 2.2kOhms Supplier Device Package: SOT-563	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH