| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.56 EUR |
| 2000+ | 0.55 EUR |
| 4000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSBC123EPDXV6T1G onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563, Supplier Device Package: SOT-563, Resistor - Emitter Base (R2): 2.2kOhms, Resistor - Base (R1): 2.2kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSBC123EPDXV6T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NSBC123EPDXV6T1G | onsemi |
 Description: TRANS PREBIAS NPN/PNP 50V SOT563Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 2.2kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
NSBC123EPDXV6T1G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT563 Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 2.2kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSBC123EPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSBC123EPDXV6T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123EPDXV6T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123EPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH