NSBC123JDXV6T5G ON Semiconductor
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Technische Details NSBC123JDXV6T5G ON Semiconductor
Description: TRANS PREBIAS 2NPN 50V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-563.
Weitere Produktangebote NSBC123JDXV6T5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NSBC123JDXV6T5G | Hersteller : onsemi |
 Description: TRANS PREBIAS 2NPN 50V SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
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