NSBC123JDXV6T5G ON Semiconductor

Description: TRANS PREBIAS 2NPN 50V SOT563, Supplier Device Package: SOT-563, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).