NSBC123JPDP6T5G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Supplier Device Package: SOT-963
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.095 EUR |
| 16000+ | 0.087 EUR |
| 24000+ | 0.084 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSBC123JPDP6T5G onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963, Supplier Device Package: SOT-963, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 339mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-963, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSBC123JPDP6T5G nach Preis ab 0.094 EUR bis 0.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NSBC123JPDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963 Supplier Device Package: SOT-963 Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V |
auf Bestellung 192000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| NSBC123JPDP6T5G | onsemi |
Digital Transistors BRT COMPLEMENTARY |
auf Bestellung 3245 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NSBC123JPDP6T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Supplier Device Package: SOT-963
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Description: TRANS PREBIAS 2NPN 50V SOT-963
Supplier Device Package: SOT-963
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
auf Bestellung 192000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 53+ | 0.4 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.14 EUR |
| NSBC123JPDP6T5G |
|
Hersteller: onsemi
Digital Transistors BRT COMPLEMENTARY
Digital Transistors BRT COMPLEMENTARY
auf Bestellung 3245 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.63 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.14 EUR |
| 5000+ | 0.11 EUR |
| 8000+ | 0.094 EUR |