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NSBC123JPDP6T5G

NSBC123JPDP6T5G onsemi


dtc123jp-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
auf Bestellung 192000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.08 EUR
16000+0.073 EUR
24000+0.071 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSBC123JPDP6T5G onsemi

Description: TRANS PREBIAS 2NPN 50V SOT-963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 339mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-963.

Weitere Produktangebote NSBC123JPDP6T5G nach Preis ab 0.079 EUR bis 0.55 EUR

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NSBC123JPDP6T5G NSBC123JPDP6T5G Hersteller : onsemi dtc123jp-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
auf Bestellung 192000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.12 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
NSBC123JPDP6T5G Hersteller : onsemi DTC123JP-D.PDF Digital Transistors BRT COMPLEMENTARY
auf Bestellung 3245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.53 EUR
10+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.12 EUR
5000+0.093 EUR
8000+0.079 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NSBC123JPDP6T5G Hersteller : ONSEMI dtc123jp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
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Im Einkaufswagen  Stück im Wert von  UAH