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NSBC124EPDP6T5G

NSBC124EPDP6T5G onsemi

dtc124ep-d.pdf
Hersteller: onsemi
Digital Transistors SOT-963 COMP NBRT
auf Bestellung 7783 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.85 EUR
10+0.8 EUR
100+0.55 EUR
500+0.34 EUR
1000+0.3 EUR
2500+0.27 EUR
5000+0.13 EUR
Mindestbestellmenge: 4 Stücke
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Technische Details NSBC124EPDP6T5G onsemi

Description: TRANS PREBIAS NPN 254MW SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SOT-963.

Weitere Produktangebote NSBC124EPDP6T5G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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NSBC124EPDP6T5G NSBC124EPDP6T5G onsemi dtc124ep-d.pdf Description: TRANS PREBIAS NPN 254MW SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSBC124EPDP6T5G NSBC124EPDP6T5G onsemi dtc124ep-d.pdf Description: TRANS PREBIAS NPN 254MW SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC124EPDP6T5G dtc124ep-d.pdf
NSBC124EPDP6T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 254MW SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSBC124EPDP6T5G dtc124ep-d.pdf
NSBC124EPDP6T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 254MW SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH