auf Bestellung 7783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.8 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.45 EUR |
| 5000+ | 0.15 EUR |
| 8000+ | 0.093 EUR |
Produktrezensionen
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Technische Details NSBC124EPDP6T5G onsemi
Description: TRANS PREBIAS NPN 254MW SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SOT-963.
Weitere Produktangebote NSBC124EPDP6T5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NSBC124EPDP6T5G | Hersteller : ONSEMI |
Description: ONSEMI - NSBC124EPDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJTtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 15950 Stücke: Lieferzeit 14-21 Tag (e) |
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NSBC124EPDP6T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
Produkt ist nicht verfügbar |
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NSBC124EPDP6T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R |
Produkt ist nicht verfügbar |
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NSBC124EPDP6T5G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 254MW SOT963Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-963 |
Produkt ist nicht verfügbar |
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NSBC124EPDP6T5G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 254MW SOT963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-963 |
Produkt ist nicht verfügbar |


