auf Bestellung 4255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.78 EUR |
| 10+ | 0.59 EUR |
| 100+ | 0.37 EUR |
| 1000+ | 0.20 EUR |
| 2500+ | 0.18 EUR |
| 8000+ | 0.14 EUR |
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Technische Details NSBC143EDP6T5G onsemi
Description: TRANS 2NPN PREBIAS 0.339W SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 339mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: SOT-963.
Weitere Produktangebote NSBC143EDP6T5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NSBC143EDP6T5G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN 50V 100mA 408mW 6-Pin SOT-963 T/R |
Produkt ist nicht verfügbar |
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NSBC143EDP6T5G | Hersteller : onsemi |
Description: TRANS 2NPN PREBIAS 0.339W SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-963 |
Produkt ist nicht verfügbar |